{"id":3652,"date":"2022-03-04T02:05:00","date_gmt":"2022-03-04T00:05:00","guid":{"rendered":"https:\/\/modinst.lu.lv\/?p=3652"},"modified":"2022-03-04T02:03:13","modified_gmt":"2022-03-04T00:03:13","slug":"new-article-about-thermally-stimulated-dislocated-silicon-crystals","status":"publish","type":"post","link":"https:\/\/modinst.lu.lv\/en\/new-article-about-thermally-stimulated-dislocated-silicon-crystals\/","title":{"rendered":"New article on thermally stimulated dislocation generation in silicon crystals"},"content":{"rendered":"\n<p>Researchers <a href=\"https:\/\/orcid.org\/0000-0002-5465-7759\" target=\"_blank\" rel=\"noreferrer noopener\">Andrejs Sabanskis<\/a> and <a href=\"https:\/\/orcid.org\/0000-0002-5467-7864\" target=\"_blank\" rel=\"noreferrer noopener\">J\u0101nis Virbulis<\/a> from the <a href=\"https:\/\/modinst.lu.lv\/en\/\" target=\"_blank\" rel=\"noreferrer noopener\">Institute of Numerical Modelling<\/a> in collaboration with scientists <a href=\"https:\/\/orcid.org\/0000-0002-0126-7343\" target=\"_blank\" rel=\"noreferrer noopener\">Kaspars Dadzis<\/a> and <a href=\"https:\/\/orcid.org\/0000-0002-8109-6619\" target=\"_blank\" rel=\"noreferrer noopener\">Robert Menzel<\/a> have recently got a new research article published. The article titled <a href=\"https:\/\/www.mdpi.com\/2073-4352\/12\/2\/174\" target=\"_blank\" rel=\"noreferrer noopener\">Application of the Alexander \u2013 Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals<\/a> was published this year on 25<sup>th<\/sup> of January in the <em>Crystals <\/em>journal.<\/p>\n\n\n\n<p>Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement with the experiment.<\/p>\n\n\n\n<p>To better explain the experimentally observed dislocation distribution, the Alexander\u2013Haasen model was extended with a critical stress threshold below which no dislocation multiplication occurs. The results are compared with the experiment, and some remaining shortcomings in the model are discussed.<\/p>\n\n\n\n<p>New solvers for the temperature, stress and dislocation density are developed using open-source finite element library&nbsp;<a href=\"https:\/\/www.dealii.org\/\" target=\"_blank\" rel=\"noreferrer noopener\">deal.II<\/a> and are freely available to all interested researchers as a new open-source solver package&nbsp;<a href=\"https:\/\/github.com\/aSabanskis\/MACPLAS\" target=\"_blank\" rel=\"noreferrer noopener\">MACPLAS<\/a>.<br><br>The full article is openly accessible <a href=\"https:\/\/www.mdpi.com\/2073-4352\/12\/2\/174\" target=\"_blank\" rel=\"noreferrer noopener\">here<\/a>.<\/p>\n\n\n\n<p>The article was published as part of the PostDoc project&nbsp;<a href=\"https:\/\/www.lu.lv\/en\/zinatne\/programmas-un-projekti\/es-strukturfondi\/1112-pasakums-pecdoktoranturas-petniecibas-atbalsts-2karta\/termisko-spriegumu-un-augsanas-apstaklu-ietekme-uz-punktdefektu-un-dislokaciju-sadalijumiem-pusvaditaju-kristalos\/\" target=\"_blank\" rel=\"noreferrer noopener\"><em>Effect of thermal stresses and growth conditions on the point defect and dislocation distributions in semiconductor crystals<\/em>&nbsp;<\/a>(1.1.1.2\/VIAA\/2\/18\/280).<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Researchers Andrejs Sabanskis and J\u0101nis Virbulis from the Institute of Numerical Modelling in collaboration with scientists Kaspars Dadzis and Robert Menzel have recently got a new research article published. The article titled Application of the Alexander \u2013 Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals was published this year on 25th of [&hellip;]<\/p>\n","protected":false},"author":5,"featured_media":3651,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[14],"tags":[],"class_list":["post-3652","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>New article on thermally stimulated dislocation generation in silicon crystals - Institute of Numerical Modelling<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/modinst.lu.lv\/en\/new-article-about-thermally-stimulated-dislocated-silicon-crystals\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"New article on thermally stimulated dislocation generation in silicon crystals - Institute of Numerical Modelling\" \/>\n<meta property=\"og:description\" content=\"Researchers Andrejs Sabanskis and J\u0101nis Virbulis from the Institute of Numerical Modelling in collaboration with scientists Kaspars Dadzis and Robert Menzel have recently got a new research article published. 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